glass passivated junction hermetically sealed package controlled avalanche characteristics low reverse current high surge current loading parameter test conditions type symbol value unit reverse voltage byw82 v r =v rrm 200 v g =repetitive peak reverse voltage byw83 v r =v rrm 400 v byw84 v r =v rrm 600 v byw85 v r =v rrm 800 v BYW86 v r =v rrm 1000 v peak forward surge current t p =10ms, half sinewave i fsm 100 a repetitive peak forward current i frm 18 a average forward current t amb 65 c i fav 3 a pulse avalanche peak power t p =20 s, half sinewave, t j =175 c p r 1000 w pulse energy in avalanche mode, non repetitive (inductive load switch off) i (br)r =1a, t j =175 c e r 20 mj i 2 *trating i 2 *t 40 a 2 *s junction and storage temperature range t j =t stg 65...+175 c maximum thermal resistance t j = 25 c parameter test conditions symbol value unit junction ambient l=10mm, t l =constant r thja 25 k/w on pc board with spacing 37.5mm r thja 70 k/w 1 of 3 www.sunmate.tw weight : 0.465 gram case : do-15 molded plastic mechanical data epoxy : ul94v-o rate flame retardant lead : axial lead solderable per mil-std-202, polarity : color band denotes cathode end mounting position : any a a b c d do-15 dim min max a 25.40 b 5.50 7.62 c 0.686 0.889 d 2.60 3.60 all dimensions in mm method 208 guaranteed features maximum ratings t a = 25 c unless otherwise specified byw82 - BYW86 fast recovery rectifier diodes voltage range: 200 - 1000v current: 3.0 a
electrical characteristics t j = 25 c parameter test conditions type typ max unit forward voltage i f =3a v f 1.0 v reverse current v r =v rrm i r 0.1 1 a v r =v rrm , t j =100 c i r 5 10 a breakdown voltage i r =100 a, t p /t=0.01, t p =0.3ms v (br) 1600 v diode capacitance v r =0, f=0.47mhz c d 65 100 pf reverse recovery time i f =0.5a, i r =1a, i r =0.25a t rr 2 4 s y i f =1a, d i /d t =5a/ s, v r =50v t rr 3 6 s reverse recovery charge i f =1a, d i /d t =5a/ s q rr 6 10 c characteristics (t j = 25 c unless otherwise specified) 0 5 10 15 25 0 10 20 30 40 r therm. resist. junction / ambient ( k/w ) thja l lead length ( mm ) 30 94 9563 20 ll t l =constant figure 1. max. thermal resistance vs. lead length 0 0 0.4 0.8 1.2 1.6 2.0 i average forward current ( a ) fav t amb ambient temperature ( c ) 94 9565 40 80 120 160 200 v r =v rrm f=1khz r thja =70k/w pcb figure 2. max. average forward current vs. ambient temperature 0 0 1 2 3 4 i average forward current ( a ) fav t amb ambient temperature ( c ) 94 9564 40 80 120 160 200 v r =v rrm f=1khz r thja =25k/w l=10mm figure 3. max. average forward current vs. ambient temperature 0 40 80 120 160 0.1 1 10 100 1000 t j junction temperature ( c ) 200 94 9566 i reverse current ( a ) r scattering limit v r =v rrm figure 4. reverse current vs. junction temperature symbol min 2 of 3 www.sunmate.tw
0 0.6 1.2 1.8 2.4 0.01 0.1 1 10 100 i forward current ( a ) f v f forward voltage ( v ) 3.0 94 9567 t amb =25 c t amb = 175 c scattering limit figure 5. max. forward current vs. forward voltage 0 20 40 60 80 0.1 1 10 c diode capacitance ( pf ) d v r reverse voltage ( v ) 100 94 9569 figure 6. typ. diode capacitance vs. reverse voltage 1 10 100 1000 z thermal resistance for pulse cond. (k/w) thp t p pulse length ( s ) 94 9568 i frm repetitive peak forward current ( a ) 10 4 10 3 10 2 10 1 10 0 10 1 10 1 10 0 10 1 t p /t=0.05 v rrm =1000v r thja =70k/w t p /t=0.5 t p /t=0.2 t p /t=0.1 t p /t=0.01 t amb =25 c 45 c 70 c 100 c 60 c t p /t=0.02 figure 7. thermal response 3 of 3 www.sunmate.tw
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